Single-layer & Film Ceramic Categories-Xi'an Viewfuture Tech Co., Ltd.

Single-layer & Film Ceramic

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Quality level	Series	Outline drawing	Size code	Voltage – Capacitance (max)	Features
Seven special Army sieve Normative military	CC11A CT11A CS11A		10	(50V)100pF – 100V(47pF)	Small size, large capacitance, simple structure, no insulating edges on the front and back of the electrode, use frequency up to 100GHz, suitable for Au/Sn, Au/Si, Au/Ge eutectic welding, and Sn/Pb conductive adhesive catch.
			15	(50V)240pF – 100V(150pF)
			20	(50V)470pF – 100V(150pF)
			25	(50V)680pF – 100V(240pF)
			30	(50V)1000pF – 100V(330pF)
			90	(16V/25V)10000pF
Seven special Army sieve Normative military	CC11B CT11B CS11B		15	(50V)100pF – 100V(47pF)	The single-sided electrode has an insulating edge and has low parasitic parameters, the frequency of use is as high as 100GHz. It is suitable for Au/Sn, Au/Si, Au/Ge eutectic welding, and Sn/Pb conductive adhesive bonding.
			20	(50V)240pF – 100V(150pF)
			25	(50V)470pF – 100V(150pF)
			30	(50V)680pF – 100V(240pF)
			90	(50V)1000pF – 100V(330pF)
Seven special Army sieve Normative military	CC11C CT11C CS11C		0201	(50V)56pF – 100V(18pF)	Surface mount type installation process, pure gold electrode on the surface, , suitable for Au/Sn, Au/Si, Au/Ge eutectic welding, as well as Sn/Pb and conductive adhesive bonding.
			0402	(50V)180pF – 100V(68pF)
			0603	(50V)470pF – 100V(150pF)
			0805	(50V)1000pF
Seven special Army sieve Normative military Normative militarytive militarymilitary	CC11D CT11D CS11D		15	(50V)240pF – 100V(68pF)	Multiple capacitor arrays, pure gold electrode on the surface, suitable for Au/Sn, Au/Si, Au/Ge eutectic welding, and Sn/Pb conductive adhesive bonding.
			20	(50V)470pF – 100V(68pF)
			25	(50V)680pF
			35	(50V)1000pF
Seven special Army sieve Normative military	CC11E CT11E CS11E		20	0.1pF – 25pF	Pure gold electrode on the surface, suitable for micro-assembly processes such as gold wire, gold ribbon, etc., suitable for Au/Sn, Au/Si, Au/Ge eutectic welding, as well as Sn/Pb and conductive adhesive bonding.
			25	0.1pF – 50pF
			30	0.1pF – 40pF
			35	0.1pF – 60pF
			40	0.1pF – 40pF
Industrial grade Army sieve Normative military	CM11B		10	8.2pF – 10pF	The single-sided electrode has an insulating edge and uses silicon oxide-nitride dielectric, the operating frequency is as high as 26GHz. It is suitable for Au/Sn, Au/Si, Au/Ge eutectic welding, as well as Sn/Pb and conductive adhesive bonding.
			15	0.8pF – 15pF
			20	8.2pF – 68pF
			25	100pF
			30	330pF
			35	500pF
			40	1000pF
Industrial grade	TFC (Ceramic thin film integrated circuit)			Customized processing according to customer drawings, gold tin solder can be prefabricated.	Fine lines, good batch consistency, small size and light weight, pure gold electrode on the surface, suitable for micro-assembly processes such as gold wire and gold ribbon, suitable for Au/Sn, Au/Si, Au/Ge eutectic welding, and Sn/Pb, Conductive adhesive bonding.
Industrial grade	Graphical Side metallization, patterned ceramic thin film circuit			Customized processing according to customer drawings.	Fine lines, good batch consistency, metallized pattern lines on the sidewall, pure gold electrodes on the surface, suitable for gold wires, Gold ribbon and other micro-assembly processes, suitable for Au/Sn, Au/Si, Au/Ge eutectic welding, and Sn/Pb conductive adhesive bonding.
Industrial grade	SD Thermal bridge			With aluminum nitride(AIN) or beryllium oxide(BeO) As the base material, using the Standard Electronics Industry Association (EIA) external dimensions.	Fine lines, good batch consistency, metallized pattern lines on the sidewall, pure gold electrodes on the surface, suitable for gold wires, Gold ribbon and other micro-assembly process, suitable for Au/Sn, Au/Si, Au/Ge eutectic welding, And Sn/Pb conductive adhesive bonding.
Industrial grade	SA (Ceramic metalized film spacer)			Customized processing according to customer drawings.	Fine lines, good batch consistency, small size, light weight, surface pure gold electrode, suitable for gold wire, gold ribbon, etc. Micro-assembly process, suitable for conductive adhesive bonding, 6-inch expanded crystal ring, chip box packaging.
Industrial grade	SM Gold-plated pads on the surface of the metal base			Customized processing according to customer drawings.	Molybdenum-copper or tungsten-copper alloy as the base, pure gold electrode on the surface, high thermal conductivity, suitable for Au/Sn eutectic welding, and Sn/Pb conductive adhesive bonding.
Industrial grade	FA Thin film attenuator		0402	1 – 20dB	The parasitic parameters are small, and the operating frequency is as high as 18GHz, the resistive film is tantalum nitride, which is moisture-proof, 99 alumina substrate, Pure gold electrode on the surface, suitable for micro-assembly processes such as gold wire and gold ribbon, suitable for conductive adhesive bonding.
Industrial grade	FA Thin film attenuator		0603	1 – 20dB
Industrial grade	FB Film fixed attenuator			1 – 10dB	The parasitic parameters are small, and the frequency of use is as high as 40GHz, the resistive film is tantalum nitride, wet, silicon wafer or 99 alumina substrate, surface pure gold electrode, suitable for micro-assembly processes such as gold wire and gold ribbon, suitable for conductive adhesive bonding.
				12dB
				15dB
				20dB
				30dB
				40dB
Industrial grade	FR (Thin film resistors)		0101	10Ω – 100Ω	The parasitic parameters are small, and the frequency of use is as high as 50GHz, the resistive film is tantalum nitride, which is moisture-proof, the surface pure gold electrode is suitable for micro-assembly processes such as gold wire and gold ribbon, suitable for conductive adhesive bonding.
			0201	10Ω – 200Ω
			0402	10Ω – 1000Ω
			0603	10Ω – 1000Ω